A 2.45 GHz high gain radio frequency energy harvesting system in the Internet of Thing applications

Pradeep Chindhi; Rajani Hiriyur; Geeta Kalkhambkar

doi:10.52756/10.52756/ijerr.2023.v31spl.011

Pradeep Chindhi Electrical Engineering Department, Sant Gajanan Maharaj College of Engineering, Mahagaon, Kolhapur, Maharashtra, India https://orcid.org/0000-0001-8729-984X
Rajani Hiriyur Electronics and Communication Engineering Department, Jain College of Engineering, Belagavi, Karnataka, India https://orcid.org/0000-0001-8443-7485
Geeta Kalkhambkar Electronics and Telecommunication Engineering Department, Sant Gajanan Maharaj College of Engineering, Mahagaon, Kolhapur 416503, Maharashtra, India https://orcid.org/0000-0001-9698-6190

DOI: https://doi.org/10.52756/10.52756/ijerr.2023.v31spl.011

Keywords: RF Energy Harvesting, Gain, Directivity, Efficiency, Rectenna

Abstract

To power dedicated ultra-low-power Internet of Things (IoT) devices, high-voltage electric power must be converted to low voltage, which causes losses. Radio Frequency (RF) energy harvesting allows for scavenging ultra-low RF power from nearby RF sources. This paper proposes a single-band RF Energy Harvesting System (RFEHS) for the self-sustainable IoT application. The proposed Square Microstrip Patch Antenna (SMPA) is designed, simulated, and verified using Mentor Graphics software simulations and Computer Simulation Technology Microwave Studio (CST MWS) 3D electromagnetic simulator. For the design and simulation of the rectenna (Antenna + Rectifier), Advance Design System (ADS) is used. The SMPA is fabricated on Rogers RT5880 substrate material having a dielectric constant of 2.2 and a substrate thickness of 2.5 mm. The SMPA peak gain and directivity of 6.81 dBi and 7.24 dBi, respectively, are recorded. The proposed SMPA has an approximately omnidirectional radiation pattern at 2.45 GHz. The SMPA is tested on Vector Network Analyzer (VNA) to validate simulated CST MWS Mentor Graphics results. A single-stage voltage multiplier circuit has been analyzed and discussed using vendor-defined (Murata) library components. The rectenna has a maximum RF to DC conversion efficiency of 65.17% and a DC output voltage of 3.4 V at 10 dBm RF input power and load resistance, R= 3 kΩ. A Transmission Line (TL) equivalent model is derived for the proposed SMPA.

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